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TYPICAL PERFORMANCE CURVES
APT15GP90B
APT15GP90B
900V
POWER MOS 7 IGBT
(R)
TO-247
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* 100 kHz operation @ 600V, 9A * 50 kHz operation @ 600V, 17A * SSOA Rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT15GP90B UNIT
900 20 30 43 21 60 60A @ 900V 291 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
900 3 4.5 3.2 2.7 250
2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2
Volts
I CES I GES
A nA
8-2004 050-7470 Rev C
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
1 APT15GP90B
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 450V I C = 15A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT pF V nC A
1100 120 32 7.5 60 10 27 60 9 14 33 55 TBD 430 200 9 14 70 100 TBD 790 500
MIN TYP MAX UNIT C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
44 55
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 600V VGE = 15V I C = 15A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
66
J
THERMAL AND MECHANICAL CHARACTERISTICS .50 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7470
Rev C
8-2004
TYPICAL PERFORMANCE CURVES
60 50 40 30 20 10 0 TC=25C TC=125C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
50
APT15GP90B
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
40
30 TC=125C 20 TC=25C 10
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
0
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 15A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 100
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60 70
IC, COLLECTOR CURRENT (A)
80
VCE = 180V VCE = 450V
60
40 TJ = -55C TJ = 25C TJ = 125C 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE = 720V
20
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 IC = 15A 3 2 1 0 IC = 7.5A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
4 3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC =30A
IC = 15A IC = 7.5A
IC =30A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
6
0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60 50 40 30 20 10 0 -50
0 -50
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
IC, DC COLLECTOR CURRENT(A)
1.15
050-7470
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
-25
Rev C
8-2004
14
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
80 70 60 50 40 30 20 10 0
VCE = 600V RG = 5 L = 100 H VGE =15V,TJ=25C VGE =15V,TJ=125C
APT15GP90B
12 10 8 6 4 2 0
VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H
VGE = 15V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 35 30 25 20 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 600V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100
TJ = 125C, VGE = 15V RG = 5, L = 100H, VCE = 600V
tr, RISE TIME (ns)
tf, FALL TIME (ns)
80 60 40 20 0
TJ = 25C, VGE = 15V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2000
EON2, TURN ON ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1200
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
1000 800 600 400 200 0
1500
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
1000
500
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2500
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 2000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
Eon2, 30A
2000
1500 Eon2,30A 1000 Eon2,15A 500 Eon2,9A 0 Eoff,15A Eoff, 30A
1500 Eoff, 30A 1000 Eon2, 15A Eon2, 9A 500 Eoff, 9A 0 Eoff, 15A
Rev C
8-2004
050-7470
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
Eoff, 9A
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000 Cies
IC, COLLECTOR CURRENT (A)
70 60 50 40 30 20 10
APT15GP90B
1,000
C, CAPACITANCE ( F)
P
500
100 50
Coes
Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimum Switching Safe Operating Area
0
0
0.60 0.50 0.40 0.30 0.20 0.10 0 10-5
ZJC, THERMAL IMPEDANCE (C/W)
0.9 0.7
0.5 0.3 0.1 0.05 10-4 SINGLE PULSE
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
210
FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp (C) 0.222 Power (watts) 0.278 Case temperature(C) 0.125F 0.00474F
100
50
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
10
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
0 10 20 30 40 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
5
TJ = 125C TC = 75C D = 50 % VCE = 600V RG = 5
TJ - TC R JC
050-7470
Rev C
8-2004
APT15GP90B
Gate Voltage
APT15DF100
10% TJ = 125C td(on)
V CC
IC
V CE
tr 90% 5% 10%
Drain Current
5%
DrainVoltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) 90% DrainVoltage
VTEST *DRIVER SAME TYPE AS D.U.T.
TJ = 125C
A V CE 100uH
0
IC V CLAMP B
tf
10%
Drain Current
Switching Energy
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
8-2004
Gate Collector Emitter
Rev C
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7470

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